- Radiation hardness assured DAC39RFx10-SP:
- Single event upset (SEU) immune registers
- Single-event latch up (SEL): 120MeV-cm2/mg
- RLAT Total ionizing dose (TID): 300krad (Si)
- Radiation tolerant DAC39RFx10-SEP:
- Single event upset (SEU) immune registers
- Single-event latch up (SEL): 43MeV-cm2/mg
- RLAT Total ionizing dose (TID): 30krad (Si)
- 16-bit, 10.4 or 20.8GSPS, multi-Nyquist DAC Cores
- Maximum input data rate:
- 8-bit, Single channel, DES mode: 20.8GSPS
- 12-bit, Single channel, DES mode: 15.5GSPS
- 16-bit, Single channel: 10.4GSPS
- 8-bit, Dual channel, 10.4GSPS
- 12-bit, Dual channel: 7.75GSPS/ch
- 16-bit, Dual channel: 6.2GSPS/ch
- Output bandwidth (-3dB): 12GHz
- Performance at fOUT = 2.997GHz, DES2XL mode, DEM/Dither off
- Noise floor (small signal): –155dBFS/Hz
- SFDR (-0.1dBFS) : 60dBc
- IMD3 (-7dBFS each tone) : –62dBc
- Additive phase noise, 10kHz offset: -138dBc/Hz
- Four Integrated digital up-converters (DUC)
- Interpolation: 1x, 2x, 3x, 4x, 6x, 8x, 12x ... 256x
- Complex baseband DUC for I/Q output
- Complex to real up conversion for dual channel direct RF sampling
- 64-bit frequency resolution NCOs
- JESD204C Interface
- Up to 16 Lanes at up to 12.8Gbps
- Class C-S, subclass-1 Compatible
- Internal AC coupling capacitors
- SYSREF Windowing for automatic SYSREF timing calibration
- Space screening and assurance:
- Meets ASTM E595 outgassing specification
- One fabrication, assembly, and test site
- Wafer lot traceability
- Extended product life cycle
- Radiation lot acceptance test (RLAT)
- Production burn-in (DAC39RFx10-SP only)
- This device contains non-encapsulated chip-caps with tin (Sn) finish of >97% purity. See reliability report for more information
- Radiation hardness assured DAC39RFx10-SP:
- Single event upset (SEU) immune registers
- Single-event latch up (SEL): 120MeV-cm2/mg
- RLAT Total ionizing dose (TID): 300krad (Si)
- Radiation tolerant DAC39RFx10-SEP:
- Single event upset (SEU) immune registers
- Single-event latch up (SEL): 43MeV-cm2/mg
- RLAT Total ionizing dose (TID): 30krad (Si)
- 16-bit, 10.4 or 20.8GSPS, multi-Nyquist DAC Cores
- Maximum input data rate:
- 8-bit, Single channel, DES mode: 20.8GSPS
- 12-bit, Single channel, DES mode: 15.5GSPS
- 16-bit, Single channel: 10.4GSPS
- 8-bit, Dual channel, 10.4GSPS
- 12-bit, Dual channel: 7.75GSPS/ch
- 16-bit, Dual channel: 6.2GSPS/ch
- Output bandwidth (-3dB): 12GHz
- Performance at fOUT = 2.997GHz, DES2XL mode, DEM/Dither off
- Noise floor (small signal): –155dBFS/Hz
- SFDR (-0.1dBFS) : 60dBc
- IMD3 (-7dBFS each tone) : –62dBc
- Additive phase noise, 10kHz offset: -138dBc/Hz
- Four Integrated digital up-converters (DUC)
- Interpolation: 1x, 2x, 3x, 4x, 6x, 8x, 12x ... 256x
- Complex baseband DUC for I/Q output
- Complex to real up conversion for dual channel direct RF sampling
- 64-bit frequency resolution NCOs
- JESD204C Interface
- Up to 16 Lanes at up to 12.8Gbps
- Class C-S, subclass-1 Compatible
- Internal AC coupling capacitors
- SYSREF Windowing for automatic SYSREF timing calibration
- Space screening and assurance:
- Meets ASTM E595 outgassing specification
- One fabrication, assembly, and test site
- Wafer lot traceability
- Extended product life cycle
- Radiation lot acceptance test (RLAT)
- Production burn-in (DAC39RFx10-SP only)
- This device contains non-encapsulated chip-caps with tin (Sn) finish of >97% purity. See reliability report for more information
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