0
ACTIVE
VDS (V) |
-20 |
VGS (V) |
-6 |
Type |
P-channel |
Configuration |
Dual Common Source |
Rds(on) at VGS=4.5 V (max) (mΩ) |
27 |
Rds(on) at VGS=2.5 V (max) (mΩ) |
39 |
VGSTH typ (typ) (V) |
-0.8 |
QG (typ) (nC) |
2.9 |
QGD (typ) (nC) |
0.4 |
QGS (typ) (nC) |
0.7 |
ID - silicon limited at TC=25°C (A) |
3.9 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
DSBGA (YZF)-9-3.0625 mm² 1.75 x 1.75
The CSD75207W15 device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery-operated space-constrained applications. The device has also been awarded with U.S. patents 7952145, 7420247, 7235845, and 6600182.