0
CSD75207W15
  • CSD75207W15
  • CSD75207W15

CSD75207W15

ACTIVE

-20-V, P channel NexFET™ power MOSFET, dual Common Source WLP 1.5 mm x 1.5 mm, 27 mOhm, gate ESD pro

Texas Instruments CSD75207W15 Product Info

1 April 2026 0

Parameters

VDS (V)

-20

VGS (V)

-6

Type

P-channel

Configuration

Dual Common Source

Rds(on) at VGS=4.5 V (max) (mΩ)

27

Rds(on) at VGS=2.5 V (max) (mΩ)

39

VGSTH typ (typ) (V)

-0.8

QG (typ) (nC)

2.9

QGD (typ) (nC)

0.4

QGS (typ) (nC)

0.7

ID - silicon limited at TC=25°C (A)

3.9

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

DSBGA (YZF)-9-3.0625 mm² 1.75 x 1.75

Features

  • Dual P-Channel MOSFETs
  • Common Source Configuration
  • Small Footprint 1.5-mm × 1.5-mm
  • Gate-Source Voltage Clamp
  • Gate ESD Protection >4 kV
    • HBM JEDEC standard JESD22-A114
  • Pb and Halogen Free
  • RoHS Compliant
  • Dual P-Channel MOSFETs
  • Common Source Configuration
  • Small Footprint 1.5-mm × 1.5-mm
  • Gate-Source Voltage Clamp
  • Gate ESD Protection >4 kV
    • HBM JEDEC standard JESD22-A114
  • Pb and Halogen Free
  • RoHS Compliant

Description

The CSD75207W15 device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery-operated space-constrained applications. The device has also been awarded with U.S. patents 7952145, 7420247, 7235845, and 6600182.

The CSD75207W15 device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery-operated space-constrained applications. The device has also been awarded with U.S. patents 7952145, 7420247, 7235845, and 6600182.

Subscribe to Welllinkchips !
Your Name
* Email
Submit a request