0
ACTIVE
VDS (V) |
-20 |
VGS (V) |
-12 |
Type |
P-channel |
Configuration |
Single |
Rds(on) at VGS=4.5 V (max) (mΩ) |
42 |
Rds(on) at VGS=2.5 V (max) (mΩ) |
70 |
VGSTH typ (typ) (V) |
-0.95 |
QG (typ) (nC) |
2.7 |
QGD (typ) (nC) |
0.56 |
QGS (typ) (nC) |
0.67 |
ID - silicon limited at TC=25°C (A) |
3.2 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
PICOSTAR (YJK)-3-1.0877 mm² 1.49 x 0.73
This 29.7-mΩ, –20-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.
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