0
ACTIVE
VDS (V) |
-20 |
VGS (V) |
-12 |
Type |
P-channel |
Configuration |
Single |
Rds(on) at VGS=4.5 V (max) (mΩ) |
159 |
Rds(on) at VGS=2.5 V (max) (mΩ) |
260 |
VGSTH typ (typ) (V) |
-0.95 |
QG (typ) (nC) |
0.7 |
QGD (typ) (nC) |
0.1 |
QGS (typ) (nC) |
0.26 |
ID - silicon limited at TC=25°C (A) |
1.7 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
PICOSTAR (YJM)-3-0.414 mm² 0.69 x 0.6
This –20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.