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CSD25480F3
  • CSD25480F3

CSD25480F3

ACTIVE

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection

Texas Instruments CSD25480F3 Product Info

1 April 2026 0

Parameters

VDS (V)

-20

VGS (V)

-12

Type

P-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

159

Rds(on) at VGS=2.5 V (max) (mΩ)

260

VGSTH typ (typ) (V)

-0.95

QG (typ) (nC)

0.7

QGD (typ) (nC)

0.1

QGS (typ) (nC)

0.26

ID - silicon limited at TC=25°C (A)

1.7

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

PICOSTAR (YJM)-3-0.414 mm² 0.69 x 0.6

Features

  • Low on-resistance
  • Ultra-low Qg and Qgd
  • Ultra-small footprint
    • 0.73 mm × 0.64 mm
  • Low profile
    • 0.36-mm max height
  • Integrated ESD protection diode
  • Lead and halogen free
  • RoHS compliant
  • Low on-resistance
  • Ultra-low Qg and Qgd
  • Ultra-small footprint
    • 0.73 mm × 0.64 mm
  • Low profile
    • 0.36-mm max height
  • Integrated ESD protection diode
  • Lead and halogen free
  • RoHS compliant

Description

This –20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

This –20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

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