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CSD25213W10
  • CSD25213W10
  • CSD25213W10

CSD25213W10

ACTIVE

-20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 47 mOhm, gate ESD protection

Texas Instruments CSD25213W10 Product Info

1 April 2026 0

Parameters

VDS (V)

-20

VGS (V)

-6

Type

P-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

47

Rds(on) at VGS=2.5 V (max) (mΩ)

67

VGSTH typ (typ) (V)

-0.85

QG (typ) (nC)

2.2

QGD (typ) (nC)

0.14

QGS (typ) (nC)

0.74

ID - silicon limited at TC=25°C (A)

1.6

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

DSBGA (YZB)-4-1.5625 mm² 1.25 x 1.25

Features

  • Ultra Low Qg and Qgd
  • Small Footprint 1mm × 1mm
  • Low Profile 0.62mm Height
  • Pb Free
  • Gate-Source Voltage Clamp
  • Gate ESD Protection
  • RoHS Compliant
  • Halogen Free
  • Ultra Low Qg and Qgd
  • Small Footprint 1mm × 1mm
  • Low Profile 0.62mm Height
  • Pb Free
  • Gate-Source Voltage Clamp
  • Gate ESD Protection
  • RoHS Compliant
  • Halogen Free

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

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