0
ACTIVE
VDS (V) |
-20 |
VGS (V) |
-6 |
Type |
P-channel |
Configuration |
Single |
Rds(on) at VGS=4.5 V (max) (mΩ) |
47 |
Rds(on) at VGS=2.5 V (max) (mΩ) |
67 |
VGSTH typ (typ) (V) |
-0.85 |
QG (typ) (nC) |
2.2 |
QGD (typ) (nC) |
0.14 |
QGS (typ) (nC) |
0.74 |
ID - silicon limited at TC=25°C (A) |
1.6 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
DSBGA (YZB)-4-1.5625 mm² 1.25 x 1.25
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.