0
ACTIVE
VDS (V) |
-8 |
VGS (V) |
-6 |
Type |
P-channel |
Configuration |
Single |
Rds(on) at VGS=4.5 V (max) (mΩ) |
9.9 |
Rds(on) at VGS=2.5 V (max) (mΩ) |
14 |
VGSTH typ (typ) (V) |
-0.7 |
QG (typ) (nC) |
18.9 |
QGD (typ) (nC) |
4.2 |
QGS (typ) (nC) |
3.2 |
ID - silicon limited at TC=25°C (A) |
5 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
DSBGA (YZF)-9-3.0625 mm² 1.75 x 1.75
This 8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
