0
CSD22202W15
  • CSD22202W15
  • CSD22202W15

CSD22202W15

ACTIVE

-8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 12.2 mOhm, gate ESD protection

Texas Instruments CSD22202W15 Product Info

1 April 2026 3

Parameters

VDS (V)

-8

VGS (V)

-6

Type

P-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

12.2

Rds(on) at VGS=2.5 V (max) (mΩ)

17.4

VGSTH typ (typ) (V)

-0.8

QG (typ) (nC)

6.5

QGD (typ) (nC)

1

QGS (typ) (nC)

1.6

ID - silicon limited at TC=25°C (A)

10

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

DSBGA (YZF)-9-3.0625 mm² 1.75 x 1.75

Features

  • Low Resistance
  • Small Footprint 1.5 mm × 1.5 mm
  • Pb Free
  • Gate ESD Protection
  • RoHS Compliant
  • Halogen Free
  • Gate-Source Voltage Clamp
  • Low Resistance
  • Small Footprint 1.5 mm × 1.5 mm
  • Pb Free
  • Gate ESD Protection
  • RoHS Compliant
  • Halogen Free
  • Gate-Source Voltage Clamp

Description

The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

Subscribe to Welllinkchips !
Your Name
* Email
Submit a request