0
ACTIVE
VDS (V) |
-8 |
VGS (V) |
-6 |
Type |
P-channel |
Configuration |
Single |
Rds(on) at VGS=4.5 V (max) (mΩ) |
12.2 |
Rds(on) at VGS=2.5 V (max) (mΩ) |
17.4 |
VGSTH typ (typ) (V) |
-0.8 |
QG (typ) (nC) |
6.5 |
QGD (typ) (nC) |
1 |
QGS (typ) (nC) |
1.6 |
ID - silicon limited at TC=25°C (A) |
10 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
DSBGA (YZF)-9-3.0625 mm² 1.75 x 1.75
The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
