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CSD19538Q3A
  • CSD19538Q3A
  • CSD19538Q3A
  • CSD19538Q3A

CSD19538Q3A

ACTIVE

100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 61 mOhm

Texas Instruments CSD19538Q3A Product Info

1 April 2026 0

Parameters

VDS (V)

100

VGS (V)

20

Type

N-channel

Configuration

Single

Rds(on) at VGS=10 V (max) (mΩ)

61

VGSTH typ (typ) (V)

3.2

QG (typ) (nC)

4.3

QGD (typ) (nC)

0.8

QGS (typ) (nC)

1.6

ID - silicon limited at TC=25°C (A)

13.7

ID - package limited (A)

15

Logic level

No

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

VSONP (DNH)-8-10.89 mm² 3.3 x 3.3

Features

  • Ultra-low Qg and Qgd
  • Low-thermal resistance
  • Avalanche rated
  • Lead free
  • RoHS compliant
  • Halogen free
  • SON 3.3mm × 3.3mm plastic package
  • Ultra-low Qg and Qgd
  • Low-thermal resistance
  • Avalanche rated
  • Lead free
  • RoHS compliant
  • Halogen free
  • SON 3.3mm × 3.3mm plastic package

Description

This 100V, 49mΩ, SON 3.3mm × 3.3mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications.

This 100V, 49mΩ, SON 3.3mm × 3.3mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications.

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