0
VDS (V) |
100 |
VGS (V) |
20 |
Type |
N-channel |
Configuration |
Single |
Rds(on) at VGS=10 V (max) (mΩ) |
61 |
VGSTH typ (typ) (V) |
3.2 |
QG (typ) (nC) |
4.3 |
QGD (typ) (nC) |
0.8 |
QGS (typ) (nC) |
1.6 |
ID - silicon limited at TC=25°C (A) |
13.7 |
ID - package limited (A) |
15 |
Logic level |
No |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
VSONP (DNH)-8-10.89 mm² 3.3 x 3.3
This 100V, 49mΩ, SON 3.3mm × 3.3mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications.