CSD19531Q5A

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Texas Instruments CSD19531Q5A Product Info

1 April 2026 0

VDS (V)	100
VGS (V)	20
Type	N-channel
Configuration	Single
Rds(on) at VGS=10 V (max) (mΩ)	6.4
VGSTH typ (typ) (V)	2.7
QG (typ) (nC)	37
QGD (typ) (nC)	6.6
QGS (typ) (nC)	10.5
ID - silicon limited at TC=25°C (A)	110
ID - package limited (A)	100
Logic level	No
Rating	Catalog
Operating temperature range (°C)	-55 to 150

VSONP (DQJ)-8-29.4 mm² 4.9 x 6

This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

Typical R_θJA = 40°C/W on a 1−inch², 2-oz. Cu pad on a 0.06−inch thick FR4 PCB. Max R_θJC = 1.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%

For all available packages, see the orderable addendum at the end of the data sheet.

This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

Typical R_θJA = 40°C/W on a 1−inch², 2-oz. Cu pad on a 0.06−inch thick FR4 PCB. Max R_θJC = 1.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%

For all available packages, see the orderable addendum at the end of the data sheet.

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