0
CSD18541F5
  • CSD18541F5

CSD18541F5

ACTIVE

60-V, N channel NexFET™ power MOSFET, single LGA 1.5 mm x 0.8mm, 65 mOhm, gate ESD protection

Texas Instruments CSD18541F5 Product Info

1 April 2026 0

Parameters

VDS (V)

60

VGS (V)

20

Type

N-channel

Configuration

Single

Rds(on) at VGS=10 V (max) (mΩ)

65

Rds(on) at VGS=4.5 V (max) (mΩ)

75

VGSTH typ (typ) (V)

1.75

QG (typ) (nC)

11

QGD (typ) (nC)

1.6

QGS (typ) (nC)

1.5

ID - silicon limited at TC=25°C (A)

2.2

ID - package limited (A)

2.2

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

PICOSTAR (YJK)-3-1.0877 mm² 1.49 x 0.73

Features

  • Low on-resistance
  • Ultra-low Qg and Qgd
  • Ultra-small footprint
    • 1.53 mm × 0.77 mm
  • Low profile
    • 0.36-mm height
  • Integrated ESD protection diode
  • Lead and halogen free
  • RoHS compliant
  • Low on-resistance
  • Ultra-low Qg and Qgd
  • Ultra-small footprint
    • 1.53 mm × 0.77 mm
  • Low profile
    • 0.36-mm height
  • Integrated ESD protection diode
  • Lead and halogen free
  • RoHS compliant

Description

This 54-mΩ, 60-V, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many space constrained industrial load switch applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.

This 54-mΩ, 60-V, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many space constrained industrial load switch applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.

Subscribe to Welllinkchips !
Your Name
* Email
Submit a request