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CSD17551Q3A
  • CSD17551Q3A
  • CSD17551Q3A

CSD17551Q3A

ACTIVE

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9 mOhm

Texas Instruments CSD17551Q3A Product Info

1 April 2026 0

Parameters

VDS (V)

30

VGS (V)

20

Type

N-channel

Configuration

Single

Rds(on) at VGS=10 V (max) (mΩ)

9

Rds(on) at VGS=4.5 V (max) (mΩ)

11.8

VGSTH typ (typ) (V)

1.6

QG (typ) (nC)

6

QGD (typ) (nC)

1.5

QGS (typ) (nC)

2.3

ID - silicon limited at TC=25°C (A)

48

ID - package limited (A)

48

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

VSONP (DNH)-8-10.89 mm² 3.3 x 3.3

Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • SON 3.3 mm × 3.3 mm Plastic Package
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • SON 3.3 mm × 3.3 mm Plastic Package

Description

This 30 V, 7.8 mΩ, 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

This 30 V, 7.8 mΩ, 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

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