0
ACTIVE
VDS (V) |
30 |
VGS (V) |
12 |
Type |
N-channel |
Configuration |
Single |
Rds(on) at VGS=4.5 V (max) (mΩ) |
128 |
Rds(on) at VGS=2.5 V (max) (mΩ) |
160 |
VGSTH typ (typ) (V) |
0.85 |
QG (typ) (nC) |
0.92 |
QGD (typ) (nC) |
0.075 |
QGS (typ) (nC) |
0.28 |
ID - silicon limited at TC=25°C (A) |
3 |
ID - package limited (A) |
3 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
PICOSTAR (YJJ)-3-0.6 mm² 1 x 0.6
This 99-mΩ, 30-V, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.