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CSD17484F4
  • CSD17484F4

CSD17484F4

ACTIVE

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 128 mOhm, gate ESD protection

Texas Instruments CSD17484F4 Product Info

1 April 2026 1

Parameters

VDS (V)

30

VGS (V)

12

Type

N-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

128

Rds(on) at VGS=2.5 V (max) (mΩ)

160

VGSTH typ (typ) (V)

0.85

QG (typ) (nC)

0.92

QGD (typ) (nC)

0.075

QGS (typ) (nC)

0.28

ID - silicon limited at TC=25°C (A)

3

ID - package limited (A)

3

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

PICOSTAR (YJJ)-3-0.6 mm² 1 x 0.6

Features

  • Low on-resistance
  • Ultra-low Qg and Qgd
  • Low-threshold voltage
  • Ultra-small footprint (0402 Case Size)
    • 1.0 mm × 0.6 mm
  • Ultra-low profile
    • 0.2-mm height
  • Integrated ESD protection diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and halogen free
  • RoHS compliant
  • Low on-resistance
  • Ultra-low Qg and Qgd
  • Low-threshold voltage
  • Ultra-small footprint (0402 Case Size)
    • 1.0 mm × 0.6 mm
  • Ultra-low profile
    • 0.2-mm height
  • Integrated ESD protection diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and halogen free
  • RoHS compliant

Description

This 99-mΩ, 30-V, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

This 99-mΩ, 30-V, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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