0
ACTIVE
VDS (V) |
30 |
VGS (V) |
12 |
Type |
N-channel |
Configuration |
Single |
Rds(on) at VGS=10 V (max) (mΩ) |
230 |
Rds(on) at VGS=4.5 V (max) (mΩ) |
260 |
Rds(on) at VGS=2.5 V (max) (mΩ) |
310 |
VGSTH typ (typ) (V) |
0.85 |
QG (typ) (nC) |
1.01 |
QGD (typ) (nC) |
0.13 |
QGS (typ) (nC) |
0.22 |
ID - silicon limited at TC=25°C (A) |
1.5 |
ID - package limited (A) |
1.5 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
PICOSTAR (YJC)-3-0.657225 mm² 1.035 x 0.635
This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
