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CSD16556Q5B
  • CSD16556Q5B
  • CSD16556Q5B

CSD16556Q5B

ACTIVE

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm

Texas Instruments CSD16556Q5B Product Info

1 April 2026 0

Parameters

VDS (V)

25

VGS (V)

20

Type

N-channel

Configuration

Single

Rds(on) at VGS=10 V (max) (mΩ)

1.07

Rds(on) at VGS=4.5 V (max) (mΩ)

1.5

VGSTH typ (typ) (V)

1.4

QG (typ) (nC)

37

QGD (typ) (nC)

13

QGS (typ) (nC)

12

ID - silicon limited at TC=25°C (A)

263

ID - package limited (A)

100

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

VSON-CLIP (DNK)-8-30 mm² 6 x 5

Features

  • Extremely Low Resistance
  • Ultralow Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package
  • Extremely Low Resistance
  • Ultralow Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

Description

This 25 V, 0.9 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.

This 25 V, 0.9 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.

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