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CSD16321Q5
  • CSD16321Q5
  • CSD16321Q5

CSD16321Q5

ACTIVE

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm

Texas Instruments CSD16321Q5 Product Info

1 April 2026 0

Parameters

VDS (V)

25

VGS (V)

10

Type

N-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

2.6

VGSTH typ (typ) (V)

1.1

QG (typ) (nC)

14

QGD (typ) (nC)

2.5

QGS (typ) (nC)

4

ID - silicon limited at TC=25°C (A)

177

ID - package limited (A)

100

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

VSON-CLIP (DQH)-8-30 mm² 6 x 5

Features

  • Optimized for 5V gate drive
  • Ultra-low Qg and Qgd
  • Low-thermal resistance
  • Avalanche rated
  • Lead-free terminal plating
  • RoHS compliant
  • SON 5mm × 6mm plastic package
  • Optimized for 5V gate drive
  • Ultra-low Qg and Qgd
  • Low-thermal resistance
  • Avalanche rated
  • Lead-free terminal plating
  • RoHS compliant
  • SON 5mm × 6mm plastic package

Description

This 25V, 1.9mΩ, 5mm × 6mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.

This 25V, 1.9mΩ, 5mm × 6mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.

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