0
CSD13385F5
  • CSD13385F5

CSD13385F5

ACTIVE

12-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 19 mOhm, gate ESD protection

Texas Instruments CSD13385F5 Product Info

1 April 2026 0

Parameters

VDS (V)

12

VGS (V)

8

Type

N-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

19

Rds(on) at VGS=2.5 V (max) (mΩ)

23

VGSTH typ (typ) (V)

0.8

QG (typ) (nC)

3.9

QGD (typ) (nC)

0.39

QGS (typ) (nC)

0.74

ID - silicon limited at TC=25°C (A)

7.1

ID - package limited (A)

7.1

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

PICOSTAR (YJK)-3-1.0877 mm² 1.49 x 0.73

Features

  • Low on resistance
  • Low Qg and Qgd
  • Ultra-small footprint
    • 1.53 mm × 0.77 mm
  • Low profile
    • 0.36-mm height
  • Integrated ESD protection diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and halogen free
  • RoHS compliant
  • Low on resistance
  • Low Qg and Qgd
  • Ultra-small footprint
    • 1.53 mm × 0.77 mm
  • Low profile
    • 0.36-mm height
  • Integrated ESD protection diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and halogen free
  • RoHS compliant

Description

This 12-V, 15-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.

.

.

.

.

This 12-V, 15-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.

.

.

.

.

Subscribe to Welllinkchips !
Your Name
* Email
Submit a request