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CSD13383F4
  • CSD13383F4

CSD13383F4

ACTIVE

12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 44 mOhm, gate ESD protection

Texas Instruments CSD13383F4 Product Info

1 April 2026 0

Parameters

VDS (V)

12

VGS (V)

10

Type

N-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

44

Rds(on) at VGS=2.5 V (max) (mΩ)

65

VGSTH typ (typ) (V)

1

QG (typ) (nC)

2

QGD (typ) (nC)

0.6

QGS (typ) (nC)

0.4

ID - silicon limited at TC=25°C (A)

2.9

ID - package limited (A)

2.9

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

PICOSTAR (YJC)-3-0.657225 mm² 1.035 x 0.635

Features

  • Low on-resistance
  • Ultra low Qg and Qgd
  • Ultra-small footprint (0402 case size)
    • 1.0 mm × 0.6 mm
  • Low profile
    • 0.36 mm height
  • Integrated ESD protection diode
    • Rated >2 kV HBM
    • Rated >2 kV CDM
  • Lead and halogen free
  • RoHS compliant
  • Low on-resistance
  • Ultra low Qg and Qgd
  • Ultra-small footprint (0402 case size)
    • 1.0 mm × 0.6 mm
  • Low profile
    • 0.36 mm height
  • Integrated ESD protection diode
    • Rated >2 kV HBM
    • Rated >2 kV CDM
  • Lead and halogen free
  • RoHS compliant

Description

This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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