0
ACTIVE
VDS (V) |
12 |
VGS (V) |
10 |
Type |
N-channel |
Configuration |
Single |
Rds(on) at VGS=4.5 V (max) (mΩ) |
44 |
Rds(on) at VGS=2.5 V (max) (mΩ) |
65 |
VGSTH typ (typ) (V) |
1 |
QG (typ) (nC) |
2 |
QGD (typ) (nC) |
0.6 |
QGS (typ) (nC) |
0.4 |
ID - silicon limited at TC=25°C (A) |
2.9 |
ID - package limited (A) |
2.9 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
PICOSTAR (YJC)-3-0.657225 mm² 1.035 x 0.635
This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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