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CSD13303W1015
  • CSD13303W1015
  • CSD13303W1015

CSD13303W1015

ACTIVE

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 20 mOhm

Texas Instruments CSD13303W1015 Product Info

1 April 2026 0

Parameters

VDS (V)

12

VGS (V)

8

Type

N-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

20

Rds(on) at VGS=2.5 V (max) (mΩ)

23

VGSTH typ (typ) (V)

0.85

QG (typ) (nC)

3.9

QGD (typ) (nC)

0.4

QGS (typ) (nC)

1

ID - silicon limited at TC=25°C (A)

3.5

ID - package limited (A)

3.5

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

DSBGA (YZC)-6-2.1875 mm² 1.75 x 1.25

Features

  • Ultra Low on Resistance
  • Ultra Low Qg and Qgd
  • Small Footprint
  • Low Profile 0.62 mm Height
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • CSP 1 × 1.5 mm Wafer Level Package
  • Ultra Low on Resistance
  • Ultra Low Qg and Qgd
  • Small Footprint
  • Low Profile 0.62 mm Height
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • CSP 1 × 1.5 mm Wafer Level Package

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

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