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CSD13201W10
  • CSD13201W10
  • CSD13201W10

CSD13201W10

ACTIVE

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 34 mOhm

Texas Instruments CSD13201W10 Product Info

1 April 2026 0

Parameters

VDS (V)

12

VGS (V)

8

Type

N-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

34

Rds(on) at VGS=2.5 V (max) (mΩ)

39

VGSTH typ (typ) (V)

0.8

QG (typ) (nC)

2.3

QGD (typ) (nC)

0.3

QGS (typ) (nC)

0.5

ID - silicon limited at TC=25°C (A)

1.6

ID - package limited (A)

1.6

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

DSBGA (YZB)-4-1.5625 mm² 1.25 x 1.25

Features

  • Ultra-Low Qg and Qgd
  • Small Footprint (1 mm × 1 mm)
  • Low Profile 0.62-mm Height
  • Pb-Free
  • RoHS Compliant
  • Halogen-Free
  • Gate-Source Voltage Clamp
  • Ultra-Low Qg and Qgd
  • Small Footprint (1 mm × 1 mm)
  • Low Profile 0.62-mm Height
  • Pb-Free
  • RoHS Compliant
  • Halogen-Free
  • Gate-Source Voltage Clamp

Description

This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.

This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.

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