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BUF12840
  • BUF12840
  • BUF12840

BUF12840

ACTIVE

12-CH Gamma Voltage Generator with Dual Memory Banks and EEPROM Access

Texas Instruments BUF12840 Product Info

1 April 2026 0

Parameters

Display type

LCD unipolar

IC integration

Gamma buffer

Vin (min) (V)

9

Vin (max) (V)

20

Applications

13 to 21 inches, 21 inches and above, 7 inches or less, 7 to 13 inches

Source driver voltage (min) (V)

9

Source driver voltage (max) (V)

20

Level shifter/scan driver (Ch)

0

Features

Gamma buffer, I2C interface

Rating

Catalog

Operating temperature range (°C)

-40 to 95

Package

VQFN (RGE)-24-16 mm² 4 x 4

Features

  • 10-BIT RESOLUTION
  • 12-CHANNEL P-GAMMA
  • READS FROM EXTERNAL EEPROM
  • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS
  • RAIL-TO-RAIL OUTPUT:
    • 300mV Min Swing-to-Rail (10mA)
    • 200mV Min Swing-to-Rail (5mA)
  • LOW SUPPLY CURRENT
  • SUPPLY VOLTAGE: 9V to 20V
  • DIGITAL SUPPLY: 2V to 5.5V
  • TWO-WIRE INTERFACE: Supports 400kHz and 3.4MHz Operation
  • APPLICATIONS
    • TFT-LCD REFERENCE DRIVERS

All other trademarks are the property of their respective owners

  • 10-BIT RESOLUTION
  • 12-CHANNEL P-GAMMA
  • READS FROM EXTERNAL EEPROM
  • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS
  • RAIL-TO-RAIL OUTPUT:
    • 300mV Min Swing-to-Rail (10mA)
    • 200mV Min Swing-to-Rail (5mA)
  • LOW SUPPLY CURRENT
  • SUPPLY VOLTAGE: 9V to 20V
  • DIGITAL SUPPLY: 2V to 5.5V
  • TWO-WIRE INTERFACE: Supports 400kHz and 3.4MHz Operation
  • APPLICATIONS
    • TFT-LCD REFERENCE DRIVERS

All other trademarks are the property of their respective owners

Description

The BUF12840 offers 12 programmable gamma channels with external electrically erasable programmable read-only memory (EEPROM) read capabilities.

The BUF12840 has two separate memory banks that allow simultaneous storage of two different gamma curves to facilitate switching between gamma curves.

All gamma channels offer a rail-to-rail output that typically swings to within 200mV of either supply rail with a 5mA load. All channels are programmed using a two-wire interface that supports standard operations up to 400kHz and high-speed data transfers up to 3.4MHz.

The BUF12840 is manufactured using Texas Instruments’ proprietary, state-of-the-art, high-voltage CMOS process. This process offers very dense logic and high supply voltage operation of up to 20V. The BUF12840 is offered in a QFN-24 package, and is specified from –40°C to +95°C.

The BUF12840 offers 12 programmable gamma channels with external electrically erasable programmable read-only memory (EEPROM) read capabilities.

The BUF12840 has two separate memory banks that allow simultaneous storage of two different gamma curves to facilitate switching between gamma curves.

All gamma channels offer a rail-to-rail output that typically swings to within 200mV of either supply rail with a 5mA load. All channels are programmed using a two-wire interface that supports standard operations up to 400kHz and high-speed data transfers up to 3.4MHz.

The BUF12840 is manufactured using Texas Instruments’ proprietary, state-of-the-art, high-voltage CMOS process. This process offers very dense logic and high supply voltage operation of up to 20V. The BUF12840 is offered in a QFN-24 package, and is specified from –40°C to +95°C.

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