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MSCSM170HM12CAG
  • MSCSM170HM12CAG

MSCSM170HM12CAG

In Production

•    SiC Power MOSFET •    Kelvin source for easy drive •    Low stray inductance •    High efficiency converter •    Outstanding performance at high frequency operation •    Stable temperature behavior •    Direct mounting to heatsink (isolated package) •    Low junction to case thermal resistance •    RoHS Compliant...

Microchip Technology MSCSM170HM12CAG Product Info

16 April 2026 0

Parameters

Configuration

Full Bridge

Silicon Type

SiC MOSFET

VDSS (V)

1700

Current A (ampere)

142

RDSon (mΩ) typ

11.7

Total Gate Charge (nC)

534

Rise Time tR ns (nanosecond)

75

Fall Time tF ns (nanosecond)

56

MaxOperatingJunctionTemp

175

PKG

SP6C

Features

  • Full Bridge
  • VDSS (V): 1700
  • RDSon (mR) typ: 11.7
  • Current (A) Tc=80C: 142
  • Silicon type: SiC MOSFET
  • Package: SP6C

    • Description

    •    SiC Power MOSFET
    •    Kelvin source for easy drive
    •    Low stray inductance
    •    High efficiency converter
    •    Outstanding performance at high frequency operation
    •    Stable temperature behavior
    •    Direct mounting to heatsink (isolated package)
    •    Low junction to case thermal resistance
    •    RoHS Compliant

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