• Single Voltage Read and Write Operations– 2.7-3.6V
• Supports 50 MHz SPI clock (80 MHz no longer available see EOL NOTIFICATION)
• Endurance: 100,000 Cycles (typical)
• Greater than 100 years Data Retention
• Program & Erase Current: 30mA (max)
• Active Read Current: 10 mA (typical)
• Standby Current: 5 µA (typical)
• Uniform 4 KByte sectors
• Uniform 32 KByte & 64 KByte overlay blocks
• Chip-Erase Time: 35 ms (typical)
• Sector-/Block-Erase Time: 18 ms (typical)
• Byte-Program Time: 7 µs (typical)
• Decrease total chip programming time over Byte-Program operations
• Software polling the BUSY bit in Status Register
• Busy Status readout on SO pin in AAI Mode
• Suspends a serial sequence to the memory without deselecting the device
• Enables/Disables the Lock-Down function of the status register
• Write protection through Block-Protection bits in the status register
• Commercial: 0°C to +70°C
• Industrial: -40°C to +85°C
• Packages Available– 8-lead SOIC (200 mils)– 8-contact WSON (6mm x 5mm)– 8-lead PDIP (300 mils)– 8-bump CSP
• All devices are RoHS compliant

The SST25VF080B devices are enhanced with improved operating frequency for lower power consumption. SST25VF080B SPI serial flash memories are manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.