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MSCSM170AM11CT3AG
  • MSCSM170AM11CT3AG

MSCSM170AM11CT3AG

In Production

SiC Power MOSFET Low RDS(on) High temperature performance Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring (optional) High efficiency converter Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant ...

Microchip Technology MSCSM170AM11CT3AG Product Info

16 April 2026 2

Parameters

Configuration

Phase Leg

Silicon Type

SiC MOSFET

VDSS (V)

1700

Current A (ampere)

191

RDSon (mΩ) typ

8.8

Total Gate Charge (nC)

712

Rise Time tR ns (nanosecond)

17

Fall Time tF ns (nanosecond)

19

MaxOperatingJunctionTemp

175

PKG

SP3F

Features

  • Phase Leg
  • VDSS (V): 1700
  • RDSon (mR) typ: 8.8
  • Current (A) Tc=80C: 191
  • Silicon Type: SiC MOSFET
  • Package: SP3F

    • Description

    • SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
    • Kelvin source for easy drive
    • Low stray inductance
    • Internal thermistor for temperature monitoring (optional)
    • High efficiency converter
    • Outstanding performance at high frequency operation
    • Stable temperature behavior
    • Direct mounting to heatsink (isolated package)
    • Low junction to case thermal resistance
    • RoHS Compliant

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