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TC2320
  • TC2320

TC2320

In Production

TC2320 consists of a high voltage, low threshold N- and P-channel MOSFET in an 8-Lead SOIC package. This low threshold enhancement-mode (normally-off) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds ar...

Microchip Technology TC2320 Product Info

16 April 2026 0

Parameters

BVdss/BVdss N-Channel (V)

200

BVdss/BVdss P-Channel (V)

-200

Rds(on) N-Channel max (Ohms)

7

Rds(on) P-Channel max (Ohms)

12

Vgs(th) max (V)

2.0

Package

SOIC-8

Note

N & P-Channel pair

Features

    • Low threshold
    • Low on-resistance
    • Low input capacitance
    • Fast switching speeds
    • Freedom from secondary breakdown
    • Low input and output leakage
    • Independent, electrically isolated N- and P-channels

Description

TC2320 consists of a high voltage, low threshold N- and P-channel MOSFET in an 8-Lead SOIC package. This low threshold enhancement-mode (normally-off) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

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