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TC1550
  • TC1550

TC1550

In Production

TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired....

Microchip Technology TC1550 Product Info

16 April 2026 0

Parameters

BVdss/BVdss N-Channel (V)

500

BVdss/BVdss P-Channel (V)

-500

Rds(on) N-Channel max (Ohms)

60

Rds(on) P-Channel max (Ohms)

125

Vgs(th) max (V)

4.0

Package

SOIC-8

Note

N & P-Channel pair

Features

    • 500V breakdown voltage
    • Independent N- and P-channels
    • Electrically isolated N- and P-channels
    • Low input capacitance
    • Fast switching speeds
    • Free from secondary breakdowns
    • Low input and output leakage

Description

TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

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