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MSCSM120AM027D3AG
  • MSCSM120AM027D3AG

MSCSM120AM027D3AG

In Production

• SiC Power MOSFET - Low RDS(on) - High temperature performance• Kelvin source for easy drive• Low stray inductance• High efficiency converter• Outstanding performance at high frequency operation• Stable temperature behavior• Direct mounting to heatsink (isolated package)• Low junction to case thermal resistance• RoHS Compliant

Microchip Technology MSCSM120AM027D3AG Product Info

16 April 2026 0

Parameters

Configuration

Phase Leg

Silicon Type

SiC MOSFET

VDSS (V)

1200

Current A (ampere)

584

RDSon (mΩ) typ

2.8

Total Gate Charge (nC)

2088

Rise Time tR ns (nanosecond)

96

Fall Time tF ns (nanosecond)

51

MaxOperatingJunctionTemp

175

PKG

D3

Features

  • Configuration: Phase Leg
  • VDSS (V): 1200
  • RDSon (mR) typ: 2.8
  • Current (A) Tc=80°C: 584
  • Silicon type: SiC MOSFET
  • Package type: D3

    • Description

    • SiC Power MOSFET

    - Low RDS(on)

    - High temperature performance

    • Kelvin source for easy drive

    • Low stray inductance

    • High efficiency converter

    • Outstanding performance at high frequency operation

    • Stable temperature behavior

    • Direct mounting to heatsink (isolated package)

    • Low junction to case thermal resistance

    • RoHS Compliant

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