0
In Production
Capacitive Load Drive |
1000 pF in 40 ns |
MOSFET Driver Type |
Low Side |
Supply Voltage Max V (volt) |
6 |
Peak Sink Current A (ampere) |
1.5 |
Peak Source Current A (ampere) |
1.5 |
Propagation Delay tD1 ns (nanosecond) |
35 |
Propagation Delay tD2 ns (nanosecond) |
45 |
Sink Resistance Ω (ohm) |
8 |
Source Resistance Ω (ohm) |
10 |
Fall Time tF ns (nanosecond) |
27 |
Rise Time tR ns (nanosecond) |
33 |
# of Outputs |
1 |
Output Type |
Inverting |
Integrated MOSFETs |
External |
Peak Low-Side Source Current (Ampere) |
1.5 |
Supply Voltage Min V (volt) |
4 |
Low-Side Source Resistance Typ (Ohms) Ω (ohm) |
10 |
Low-Side Sink Resistance Typ (Ohms) Ω (ohm) |
8 |
Low-Side Rise Time (ns) |
33 |
Low-Side Fall Time (ns) |
27 |
Low-Side Turn-On Prop Delay (ns) |
35 |
Low Side Turn-off Propagation delay (ns) |
45 |
Temp Range (T-Ambient) Min °C (degrees Celsius) |
-55 |
Temp Range (T-Ambient) Max °C (degrees Celsius) |
125 |
Output Configuration |
Low-Side |
The TC4626/4627 are single CMOS high speed gate drivers with an on-board voltage boost circuit. These parts work with an input supply voltage from 4 to 6 V. The internal voltage booster will produce a VBOOST potential up to 12 V above VIN. This VBOOST is not regulated, so its voltage is dependent on the input VDD voltage and output drive loading requirements. An internal under voltage lockout (UVLO) circuit keeps the output in a low state when VBOOST drops below 7.8 V. Output is enabled when VBOOST is above 11.3 V.