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S80KS5122GABHV023
  • S80KS5122GABHV023

S80KS5122GABHV023

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The S80KS5122GABHV023 is a 512 Mb HYPERRAM™ self-refresh DRAM with a 1.8 V-only HYPERBUS™ interface (8-bit DQ, RWDS, CS#, RESET#). It supports DDR transfers up to 200 MHz for 400 MBps throughput and 35 ns maximum access time, with configurable linear or wrapped bursts (16 to 128 bytes). VCC operates from 1.7 V to 2.0 V, and deep power down is 30 µA at 105°C. Speed grade GA, 24-ball FBGA.

Infineon Technologies S80KS5122GABHV023 Product Info

16 April 2026 0

Parameters

Density

512 MBit

Family

KS-2

Initial Access Time

35 ns

Interface Bandwidth

400 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 200

Interfaces

HYPERBUS

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

See roadmap

Qualification

Industrial

Technology

HYPERRAM

Features

  • HyperBus interface
  • 1.7 V to 2.0 V VCC supply
  • Single or differential clock input
  • 8-bit DDR bus with RWDS strobe
  • 200 MHz maximum clock rate
  • Up to 400 MBps data throughput
  • 35 ns maximum access time tACC
  • Burst: linear or wrapped
  • Wrap bursts: 16/32/64/128 bytes
  • Interface standby ignores I/O pins
  • Active clock stop after tACC+30 ns
  • Hybrid sleep via CR1[5], data kept

Description

  • 400 MBps supports fast buffering
  • DDR boosts bandwidth per pin
  • 1.8 V I/O matches low-voltage SoCs
  • RWDS strobe eases timing closure
  • Linear burst fits streaming reads
  • Wrap bursts match cache line fills
  • Standby reduces idle power draw
  • Clock stop saves power on stalls
  • Hybrid sleep keeps RAM contents
  • HS entry in 3 us reduces wake cost
  • HS exit in 100 us improves response
  • Deep power down cuts leakage

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