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S25FS064SAGBHI020
  • S25FS064SAGBHI020

S25FS064SAGBHI020

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The S25FS064SAGBHI020 is a 64 Mb (8 MB) serial NOR flash memory using Infineon's 65-nm MIRRORBIT™ technology and ECLIPSE architecture. It supports SPI Multi-I/O at 1.8 V, with single, dual, and quad I/O including DDR modes. The device offers up to 80 MBps read rates, 100,000 program-erase cycles, flexible sector architectures, and advanced security with OTP and password protection. It operates from -40°C to +125°C (AEC-Q100 Grade 1).

Infineon Technologies S25FS064SAGBHI020 Product Info

16 April 2026 0

Parameters

Density

64 MBit

Family

FS-S

Interface Bandwidth

66 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / -

Interfaces

Quad SPI

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • SPI with single, dual, quad, and QPI modes
  • Double data rate (DDR) read commands
  • 256/512-byte page programming buffer
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles minimum
  • 20 year data retention minimum
  • 1024-byte OTP array with lockable regions
  • Automatic ECC with single bit error
  • Advanced sector and block protection
  • 65-nm MIRRORBIT™ technology
  • 1.7 V to 2.0 V supply voltage
  • Operating temperature up to +125°C

Description

  • Flexible I/O enables high-speed data access
  • DDR read boosts system performance
  • Large buffer accelerates programming
  • Multiple erase modes fit various needs
  • High endurance for reliable operation
  • Long retention secures critical data
  • OTP array supports secure device ID
  • ECC improves data integrity
  • Robust protection prevents data loss
  • Advanced process enables high density
  • Low voltage reduces power consumption
  • Wide temp range suits harsh environments

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