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S70GL02GT11FHI010
  • S70GL02GT11FHI010

S70GL02GT11FHI010

Active and preferred

The S70GL02GT11FHI010 is a 2 Gb (256 MB) parallel NOR flash memory based on 45-nm MIRRORBIT™ technology with a dual-die stack. It delivers 20 ns page and 110 ns random access times, supports a 512-byte programming buffer, and operates from a 3.0 V supply (2.7 V to 3.6 V) with I/O voltages from 1.65 V to VCC. With 2048 uniform 128-KB sectors, advanced sector protection, and 100,000 program-erase cycles, it is ideal for high-density embedded applications requiring reliability.

Infineon Technologies S70GL02GT11FHI010 Product Info

16 April 2026 1

Parameters

Density

2 GBit

Family

GL-T

Initial Access Time

110 ns

Interface Frequency (SDR/DDR) (MHz)

NA

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Page Access Time

20 ns

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • 45 nm MIRRORBIT™ process technology
  • Parallel 3.0 V core with versatile I/O
  • ×8 and ×16 data bus support
  • 16-word/32-byte page read buffer
  • 512-byte programming buffer
  • Uniform 128-KB sectors, 2048 sectors
  • Suspend/Resume for program/erase
  • Advanced sector protection (ASP)
  • WP# input for last sector protection
  • 20 ns page access, 110 ns random access
  • 100,000 program-erase cycles per sector
  • 20-year data retention at 1K cycles

Description

  • High density for embedded applications
  • Fast programming boosts system speed
  • Flexible I/O for broad compatibility
  • Efficient block management with large sectors
  • Reliable data with advanced protection
  • Easy status monitoring simplifies design
  • Long endurance reduces maintenance
  • Low power modes extend battery life
  • Quick access improves performance
  • Secure last sector for critical code
  • Consistent performance over temperature
  • Long data retention ensures reliability

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