BSB012NE2LXI

Infineon Technologies BSB012NE2LXI Product Info

16 April 2026 0

Budgetary Price €/1k	0.75
Ciss	4400 pF
Coss	1900 pF
ID (@25°C) max	170 A
IDpuls max	400 A
Micro-stencil	IRF66MX-25
Mounting	SMD
Operating Temperature range	-40 °C to 150 °C
Package	DirectFET(M)
Polarity	N
Ptot max	57 W
QG (typ @10V)	62 nC
QG (typ @4.5V)	30 nC
RDS (on) (@10V) max	1.2 mΩ
RDS (on) (@4.5V) max	1.6 mΩ
RDS (on) (@4.5V LL) max	1.6 mΩ
RthJC max	1 K/W
Rth	1 K/W
Special Features	Monolithically Integrated Schottky-like Diode
VDS max	25 V
VGS(th) range	1.2 V to 2 V

Save overall system costs by reducing the number of phases in multiphase converters
Reduce power losses and increase efficiency for all load conditions
Save space with smallest packages like CanPAK™, S3O8 or system in package solution
Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in

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