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S29GL512T12DHN020
  • S29GL512T12DHN020

S29GL512T12DHN020

Active and preferred

The S29GL512T12DHN020 is a 512 Mb MIRRORBIT™ flash memory with parallel interface, supporting ×8/×16 data bus and I/O voltage from 1.65 V to 3.6 V. It offers asynchronous page mode reads as fast as 15 ns and random access times down to 100 ns. With a 512-byte programming buffer, 128 KB sector erase, internal ECC, and advanced sector protection, it ensures robust data integrity. The device operates across industrial and automotive temperature ranges.

Infineon Technologies S29GL512T12DHN020 Product Info

16 April 2026 0

Parameters

Density

512 MBit

Family

GL-T

Initial Access Time

120 ns

Interface Frequency (SDR/DDR) (MHz)

NA

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 125 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Page Access Time

15 ns

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • 45-nm MIRRORBIT™ technology
  • Single supply for read/program/erase
  • Versatile I/O voltage (1.65 V to VCC)
  • ×8/×16 data bus
  • 512-byte programming buffer
  • Hardware ECC with single bit correction
  • Uniform 128-KB sectors
  • Advanced sector protection (ASP)
  • 100,000 program/erase cycles per sector
  • 20-year data retention (typical)
  • Power-up and low VCC write inhibit
  • Status Register, Data Polling, Ready/Busy pin

Description

  • High density for embedded applications
  • Flexible I/O supports various host systems
  • Fast programming with 512-byte buffer
  • Reliable data with built-in ECC
  • Simplifies memory management with uniform
  • Enhanced data security with ASP
  • Long device lifetime, 100K cycles per sector
  • Retains data up to 20 years
  • Prevents accidental writes during power
  • Easy status monitoring and diagnostics

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