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S29GL01GS10TFI010
  • S29GL01GS10TFI010

S29GL01GS10TFI010

Active and preferred

The S29GL01GS10TFI010 is a 1 Gb (128 MB) parallel NOR flash memory based on 65 nm MIRRORBIT™ Eclipse technology. It features a 3.0 V core, versatile I/O (1.65 V to VCC), 16-bit data bus, and asynchronous page mode reads with 15 ns page access and 100 ns random access. With a 512-byte write buffer, hardware ECC, advanced sector protection, and 128 KB sector erase, it ensures high endurance and data integrity for automotive and industrial embedded applications.

Infineon Technologies S29GL01GS10TFI010 Product Info

16 April 2026 0

Parameters

Density

1 GBit

Family

GL-S

Initial Access Time

100 ns

Interface Frequency (SDR/DDR) (MHz)

NA

Interfaces

Parallel

Lead Ball Finish

Matte Tin Plating

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Page Access Time

15 ns

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • 65 nm MIRRORBIT™ Eclipse technology
  • CMOS 3.0 V core with versatile I/O
  • Single supply for read/program/erase
  • Versatile I/O voltage range: 1.65 V to VCC
  • 16-bit data bus
  • Asynchronous 32-byte page read
  • 512-byte programming buffer
  • Internal hardware ECC with single bit
  • Uniform 128 KB sectors
  • Suspend/resume for program and erase
  • Advanced sector protection (ASP)
  • 1024-byte one time program (OTP) array

Description

  • High reliability with 65 nm process
  • Flexible I/O supports system integration
  • Easy power supply design
  • Supports wide I/O voltage range
  • Fast data transfers with 16-bit bus
  • Efficient page read for fast access
  • Fast programming with large buffer
  • ECC enhances data integrity
  • Simple sector management
  • Interruptible program/erase for flexibility
  • Robust data and sector protection
  • Secure OTP for permanent data

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