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RIC7S113L4
  • RIC7S113L4

RIC7S113L4

Active and preferred

RIC7S113L4 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Designed for harsh radiation environments such as space, this high- and low-side driver is SEE characterized up to LET of 81.9 MeV·cm2/mg and its electrical parameters specified pre and post-irradiation up to 100 krad(Si) TID. This is a COTS device in a MO-036AB CIC package.

Infineon Technologies RIC7S113L4 Product Info

16 April 2026 0

Parameters

Bias Supply Voltage range

5 V to 20 V

Channels

2

Configuration

High-side and low-side

Language

SPICE

Output Voltage max

20 V

OverClocking

Delay Matching 20 (ns)

Package

MO-036AB

Product Category

HiRel Power ICs

SEE

81.9 MeV∙cm2/mg

Supply Voltage range

10 V to 20 V

TID max

100 Krad(Si)

Voltage Class

100 V

VS max

400 V

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