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S29CD016J0PQFM110
  • S29CD016J0PQFM110

S29CD016J0PQFM110

The S29CD016J0PQFM110 is a 16 Mbit, 2.6 V burst mode Flash memory designed for automotive and industrial embedded systems. It supports simultaneous read/write operations with zero latency across two banks and operates up to 66 MHz on an x32 data bus. Advanced sector protection, dual boot configuration, and a 256-byte Secured Silicon area enable robust data security.

Infineon Technologies S29CD016J0PQFM110 Product Info

16 April 2026 0

Parameters

Density

16 MBit

Family

CD-J

Initial Access Time

54 ns

Interface Frequency (SDR/DDR) (MHz)

66 / -

Interfaces

Parallel Burst

Lead Ball Finish

Matte Tin Plating

Operating Temperature range

-40 °C to 125 °C

Operating Voltage range

2.5 V to 2.75 V

Operating Voltage

2.5 V

Peak Reflow Temp

260 °C

Qualification

Automotive

Features

  • Simultaneous Read/Write with zero latency
  • 32-bit data bus architecture
  • Programmable burst interface
  • Versatile I/O control (1.65 V to 3.6 V)
  • Advanced sector protection: persistent,
  • Hardware write protect pin (WP#)
  • Low power standby mode (60 µA)
  • Automatic sleep mode for power saving
  • Data polling and Ready/Busy# status outputs
  • 20-year data retention (typical)
  • 1 million write cycles per sector (typical)
  • JEDEC (JC42.4) command set compatible

Description

  • Enables fast code execution and updates
  • High throughput for data-intensive
  • Flexible burst access for optimized
  • Supports wide range of system voltages
  • Multiple protection modes enhance data
  • Prevents accidental erase/programming
  • Minimizes power consumption in standby
  • Reduces energy use during idle periods
  • Easy status monitoring for reliable operation
  • Ensures long-term data reliability
  • High endurance for frequent reprogramming
  • Simple integration with standard controllers

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