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S27KS0643GABHI023
  • S27KS0643GABHI023

S27KS0643GABHI023

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S27KS0643GABHI023 is a 64 Mb HYPERRAM™ self-refresh DRAM (PSRAM) with an octal xSPI DDR interface for memory expansion in embedded systems. It supports 1.7 V to 2.0 V VCC/VCCQ, clock rates up to 200 MHz, and throughput up to 400 MBps, with 35 ns maximum access time. It is offered in a 24-ball FBGA (1.00 mm pitch) and operates from -40°C to +85°C. Deep power down is specified at 12 µA at VCC = 2.0 V, 105°C.

Infineon Technologies S27KS0643GABHI023 Product Info

16 April 2026 0

Parameters

Density

64 MBit

Family

KS-3

Initial Access Time

35 ns

Interface Bandwidth

400 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 200

Interfaces

xSPI (Octal)

Lead Ball Finish

N/A

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

See roadmap

Qualification

Industrial

Technology

HYPERRAM

Features

  • Octal xSPI with CS# and RWDS
  • 8-bit DQ data bus
  • 1.8 V and 3.0 V interface
  • 200 MHz maximum clock rate
  • DDR transfers on both edges
  • Up to 400 MBps data throughput
  • Burst modes: linear and wrapped
  • Wrap bursts: 16/32/64/128 B
  • Hybrid burst: wrap then linear
  • Configurable output drive strength
  • Hybrid Sleep retains memory data
  • Deep power down stops refresh

Description

  • Octal xSPI reduces routing effort
  • RWDS strobe simplifies DDR design
  • Dual-voltage I/O fits more MCUs
  • 200 MHz supports fast memory access
  • DDR boosts bandwidth per clock
  • 400 MBps enables high-speed buffers
  • Burst modes tune system efficiency
  • Wrapped bursts reduce bus overhead
  • Hybrid burst aids mixed access
  • Drive strength tuning improves SI
  • Hybrid Sleep saves power, keeps data
  • DPD cuts current in idle states

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