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IPG20N10S4L-35
  • IPG20N10S4L-35

IPG20N10S4L-35

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Infineon Technologies IPG20N10S4L-35 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.45

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Germany

ID (@25°C) max

20 A

IDpuls max

80 A

Launch year

2011

Operating Temperature range

-55 °C to 175 °C

Package

dual SS08 (PG-TDSON-8)

Planned to be available until at least

2030

Polarity

N+N

Ptot max

43 W

QG (typ @10V) max

17.4 nC

QG (typ @10V)

13.4 nC

Qualification

Automotive

RDS (on) (@10V) max

35 mΩ

RthJC max

3.5 K/W

Technology

OptiMOS™T2

VDS max

100 V

VGS(th) range

1.1 V to 2.1 V

VGS(th)

1.6 V

Features

  • Dual N-ch-Logic Level-Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device
  • Dual Super S08 substitutes DPAKs

Description

  • Significant PCB area savings
  • System level cost reduction
  • Bond wire is 200um for up to 20A current
  • Larger source lead for wire bonding
  • Package: PG-TDSON-8-4
  • Equal performance to DPAK, same die size
  • Exposed pad for thermal transfer
  • 2 N-Channel MOSFETs; Isolated Leadframes

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