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S26KL512SDABHV020
  • S26KL512SDABHV020

S26KL512SDABHV020

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The S26KL512SDABHV020 is a 512 Mb (64 MB) HYPERFLASH™ memory with HYPERBUS™ interface, supporting 3.0 V and 1.8 V operation. It delivers up to 333 MBps DDR read throughput at 166 MHz (1.8 V), features uniform 256 KB sectors, ECC (1-bit correction, 2-bit detection), CRC, and advanced sector protection. Endurance is 100,000 cycles with 20-year retention. Operating from -40°C to +125°C (AEC-Q100 Grade 1), it is ideal for automotive and industrial storage applications.

Infineon Technologies S26KL512SDABHV020 Product Info

16 April 2026 0

Parameters

Bus Width

x8

Density

512 MBit

Family

KL-S

Initial Access Time

96 ns

Interface Bandwidth

200 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 100

Interfaces

HYPERBUS

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Technology

HYPERFLASH

Features

  • 3.0 V I/O with 11 bus signals
  • 1.8 V I/O with 12 bus signals
  • Up to 333 MBps sustained read throughput
  • DDR: two data transfers per clock
  • 8-bit data bus (DQ[7:0])
  • 96-ns initial random read access time
  • 512-byte program buffer
  • ECC: 1-bit correction, 2-bit detection
  • Hardware accelerated CRC calculation
  • Secure silicon region (1024-byte OTP)
  • Advanced sector protection methods
  • Low power modes: standby 25 µA, deep

Description

  • High throughput enables fast data access
  • DDR boosts system performance
  • 8-bit bus simplifies integration
  • Fast random access reduces latency
  • Large buffer speeds up programming
  • ECC ensures reliable data integrity
  • CRC detects data errors quickly
  • Secure region protects critical data
  • Flexible sector protection enhances security
  • Low power modes extend battery life

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