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S29GL256P11FAI010
  • S29GL256P11FAI010

S29GL256P11FAI010

The S29GL256P11FAI010 is a 256 Mbit page-mode Flash memory using 90 nm MirrorBit® technology for embedded systems needing high-density storage. It features uniform 64 Kword (128 Kbyte) sectors, single 3 V read/program/erase (2.7–3.6 V), and VersatileIO™ control for I/O voltages from 1.65 V to VCC. Page access time is 25 ns, random access 100–110 ns, and a 32-word write buffer enables rapid programming.

Infineon Technologies S29GL256P11FAI010 Product Info

16 April 2026 0

Parameters

Density

256 MBit

Family

GL-P

Initial Access Time

110 ns

Interface Frequency (SDR/DDR) (MHz)

NA

Interfaces

Parallel

Lead Ball Finish

Sn/Pb

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Page Access Time

25 ns

Peak Reflow Temp

220 °C

Qualification

Industrial

Features

  • 90 nm MirrorBit process technology
  • Single 3 V read/program/erase operation
  • VersatileIO control (1.65 V to VCC I/O)
  • 32-word/64-byte write buffer
  • 8-word/16-byte page read buffer
  • Uniform 64 Kword/128 Kbyte sectors
  • 128-word/256-byte Secured Silicon Sector
  • Advanced sector protection methods
  • Program/Erase Suspend and Resume
  • Hardware data protection (WP#/ACC, VCC)
  • Write pulse glitch protection
  • 100,000 erase cycles per sector (typical)

Description

  • High density for embedded storage needs
  • Low voltage reduces power consumption
  • Flexible I/O for easy system integration
  • Fast programming with write buffer
  • Page read buffer speeds up data access
  • Simplifies memory management
  • Secure area for permanent IDs
  • Protects data from accidental changes
  • Suspend/resume boosts system efficiency
  • Hardware protection prevents data loss
  • Glitch protection ensures data integrity
  • High endurance for long device life

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