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S26HS01GTFPBHI023
  • S26HS01GTFPBHI023

S26HS01GTFPBHI023

Active and preferred

The S26HS01GTFPBHI023 is a 1 Gb SEMPER™ NOR Flash memory with HYPERBUS™ and SPI interfaces, supporting DDR read rates up to 400 MBps at 200 MHz. Operating from 1.7 V to 2.0 V, it meets ISO 26262 ASIL-B and AEC-Q100 standards. Endurance Flex architecture enables up to 1.28 million program/erase cycles and 25 years retention. Integrated ECC, CRC, SafeBoot, and sector protection ensure robust data integrity and reliability for automotive and industrial applications.

Infineon Technologies S26HS01GTFPBHI023 Product Info

16 April 2026 0

Parameters

Density

1 GBit

Family

HS-T

Interface Bandwidth

333 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 166

Interfaces

HYPERBUS

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2037

Qualification

Industrial

Features

  • 45-nm MIRRORBIT technology, 2 bits/cell
  • Configurable sector architecture:
  • 256/512-byte page programming buffer
  • OTP secure silicon region (SSR) 1024 bytes
  • HYPERBUS and legacy SPI interfaces
  • DDR up to 400 MBps, SDR up to 21 MBps
  • Embedded ECC: single-bit correction,
  • Interface and data integrity CRC
  • SafeBoot and AutoBoot features
  • Advanced sector protection
  • Endurance Flex: high endurance/long retention
  • JEDEC xSPI (JESD251) compatibility

Description

  • High density and reliability for demanding
  • Flexible memory mapping for design freedom
  • Fast programming speeds boost throughput
  • Secure storage for sensitive data
  • Easy integration with multiple host
  • High data rates enable rapid data access
  • Enhanced data integrity and error resilience
  • Communication errors detected and corrected
  • Fast, reliable boot and recovery
  • Fine-grained memory protection options
  • Customizable endurance for varied needs
  • Industry-standard compatibility for broad use

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