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GS-065-060-5-T-A-TR
  • GS-065-060-5-T-A-TR

GS-065-060-5-T-A-TR

The GS-065-060-5-T-A-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current and high switching frequency.  The GS-065-060-5-T-A-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as on-board and off-board EV chargers, traction drive, ACDC and DCDC converters, industrial power supplies and renewable energy systems.

Infineon Technologies GS-065-060-5-T-A-TR Product Info

16 April 2026 0

Parameters

Green

RoHS compliant, Halogen free

ID (@25°C) max

60 A

IDpuls (@25°C) max

120 A

Package

GaNPX

QG

14 nC

Qualification

Industrial

RDS (on) (typ)

25 mΩ

RDS (on) max

32 mΩ

VDS max

650 V

Apps

Electric vehicle drivetrain system, Low-voltage drives, Photovoltaic, Power conversion

Features

  • E-mode HEMT – normally OFF
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • JEDEC qualified (JESD47, JESD22)
  • Top-side cooled
  • Zero reverse recovery loss
  • Fast, controllable fall and rise times
  • RoHS 3(6+4) compliant

Description

  • Improves system efficiency
  • Improves power density
  • Reduces system weight
  • Enables higher operating frequency
  • System cost reduction savings

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