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GS66508B-TR
  • GS66508B-TR

GS66508B-TR

The GS66508B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66508B-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, motor drives, on-board and off-board EV chargers, and industrial power supplies.

Infineon Technologies GS66508B-TR Product Info

16 April 2026 0

Parameters

Green

RoHS compliant, Halogen free

ID (@25°C) max

30 A

IDpuls (@25°C) max

60 A

Package

GaNPX

QG

6.1 nC

Qualification

Industrial

RDS (on) (typ)

50 mΩ

RDS (on) max

63 mΩ

VDS max

650 V

Apps

Data center power solutions, Telecommunications infrastructure, EV charging, Power conversion, Uninterruptible power supplies (UPS)

Features

  • E-mode HEMT – normally OFF
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • JEDEC qualified (JESD47, JESD22)
  • Bottom-side cooled
  • Zero reverse recovery loss
  • Fast, controllable fall and rise times
  • RoHS 3(6+4) compliant

Description

  • Improves system efficiency
  • Improves power density
  • Reduces system weight
  • Enables higher operating frequency
  • System cost reduction savings

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