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S25FL512SDSMFV010
  • S25FL512SDSMFV010

S25FL512SDSMFV010

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The S25FL512SDSMFV010 is a 512 Mb (64 MB) SPI Multi-I/O NOR flash memory using Infineon's 65 nm MIRRORBIT™ technology and Eclipse™ architecture for fast program and erase. It supports single, dual, and quad SPI modes, including DDR, with read speeds up to 80 MBps and page programming at 1.5 MBps. Operating from 2.7 V to 3.6 V core and 1.65 V to 3.6 V I/O, it offers 20-year data retention, 100,000 cycles, advanced security, and AEC-Q100 automotive qualification.

Infineon Technologies S25FL512SDSMFV010 Product Info

16 April 2026 0

Parameters

Density

512 MBit

Family

FL-S

Interface Bandwidth

80 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / 80

Interfaces

Quad SPI

Lead Ball Finish

Matte Tin Plating

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • CMOS 3.0 V core with versatile I/O
  • SPI interface with multi I/O support
  • 512 Mb (64 MB) density
  • Supports SPI clock up to 133 MHz
  • Quad, dual, and DDR read commands
  • 512-byte page programming buffer
  • Automatic ECC with single bit correction
  • Uniform 256-KB sectors
  • 100,000 program-erase cycles minimum
  • 20-year data retention minimum
  • 1024-byte OTP secure region
  • Block and advanced sector protection

Description

  • Versatile I/O enables flexible system design
  • Multi I/O SPI boosts data throughput
  • High density supports large code/data storage
  • 133 MHz SPI enables fast data access
  • Quad/DDR read maximizes read speed
  • Large buffer speeds up programming
  • ECC improves data reliability
  • Uniform sectors simplify memory management
  • High endurance for long device lifetime
  • 20-year retention ensures data safety
  • OTP region adds security options
  • Advanced protection enhances data safety

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