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S25FL512SAGMFVG10
  • S25FL512SAGMFVG10

S25FL512SAGMFVG10

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The S25FL512SAGMFVG10 is a 512 Mb SPI Multi-I/O NOR flash memory using MIRRORBIT™ technology and Eclipse™ architecture for fast program and erase performance. It supports single, dual, quad SPI, and DDR commands, enabling read speeds up to 80 MBps and page programming at 1.5 MBps. Operating from 2.7 V to 3.6 V core and 1.65 V to 3.6 V I/O supply, it offers uniform 256 KB sectors, 100,000 program-erase cycles, and 20-year data retention.

Infineon Technologies S25FL512SAGMFVG10 Product Info

16 April 2026 0

Parameters

Density

512 MBit

Family

FL-S

Interface Bandwidth

52 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / -

Interfaces

Quad SPI

Lead Ball Finish

Matte Tin Plating

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • 3.0 V core with versatile I/O
  • SPI Multi-I/O: Single, Dual, Quad
  • DDR read commands for all I/O modes
  • 512-byte page programming buffer
  • Automatic ECC with single-bit correction
  • Uniform 256-KB sector erase
  • 100,000 program-erase cycles min
  • 20-year data retention min
  • 1024-byte OTP secure region
  • Advanced sector and block protection
  • Supply voltage: 2.7 V to 3.6 V
  • I/O voltage: 1.65 V to VCC + 200 mV

Description

  • Flexible interface for various host systems
  • Fast data transfer with DDR and Quad I/O
  • Large buffer enables quick programming
  • ECC ensures reliable data storage
  • Easy sector management for erase
  • High endurance for frequent updates
  • Long-term data reliability
  • Secure OTP for device authentication
  • Robust protection against accidental writes
  • Wide supply range supports many designs
  • Data integrity with error reporting
  • Compatible with prior SPI flash families

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