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S25FL512SAGBHAC13
  • S25FL512SAGBHAC13

S25FL512SAGBHAC13

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The S25FL512SAGBHAC13 is a 512 Mb (64 MB) SPI Multi-I/O NOR flash memory using Infineon's 65 nm MIRRORBIT™ technology and Eclipse™ architecture for enhanced program and erase speeds. It supports single, dual, and quad SPI, plus DDR read commands, with up to 133 MHz clock and 80 MBps Quad DDR read.

Infineon Technologies S25FL512SAGBHAC13 Product Info

16 April 2026 0

Parameters

Classification

ISO 26262-ready

Density

512 MBit

Family

FL-S

Interface Bandwidth

52 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / -

Interfaces

Quad SPI

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Automotive

Apps

Domain controller for ADAS & autonomous driving, Automotive gateway, In-vehicle infotainment & HMI, Automotive instrument cluster

Features

  • CMOS 3.0 V core with versatile I/O
  • SPI with multi I/O and DDR option
  • 32-bit extended addressing
  • Normal, Fast, Dual, Quad, DDR read
  • 512-byte page programming buffer
  • Automatic ECC with single bit correction
  • Uniform 256-KB sectors
  • 100,000 program-erase cycles min
  • 20-year data retention min
  • 1024-byte OTP secure region
  • Block and advanced sector protection
  • Core VCC: 2.7 V to 3.6 V, VIO: 1.65 V to

Description

  • Flexible 3.0 V operation simplifies design
  • High-speed SPI enables fast data access
  • Large address space supports big systems
  • Multiple read modes optimize performance
  • Fast programming boosts throughput
  • ECC ensures reliable data storage
  • Uniform sectors simplify erase operations
  • High endurance lowers maintenance cost
  • Long retention secures data for years
  • OTP region enhances system security
  • Robust protection prevents data loss
  • Wide voltage range fits varied platforms

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