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S25FL128SAGMFMG00
  • S25FL128SAGMFMG00

S25FL128SAGMFMG00

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The S25FL128SAGMFMG00 is a 128 Mb SPI Multi-I/O NOR flash memory using 65-nm MIRRORBIT™ technology and Eclipse architecture. It operates from 2.7 V to 3.6 V core and 1.65 V to 3.6 V I/O, supports up to 133 MHz clock rates and quad DDR read speeds to 80 MBps. Hybrid 4-KB and 64-KB sector erase, 100,000 cycles, 20-year retention, and security features like OTP and password protection are included. AEC-Q100 Grade 1 qualification ensures reliable operation from -40°C to 125°C.

Infineon Technologies S25FL128SAGMFMG00 Product Info

16 April 2026 1

Parameters

Classification

ISO 26262-ready

Density

128 MBit

Family

FL-S

Interface Bandwidth

52 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / -

Interfaces

Quad SPI

Lead Ball Finish

Matte Tin Plating

Operating Temperature range

-40 °C to 125 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Automotive

Features

  • MIRRORBIT™ technology stores 2 bits per cell
  • Eclipse architecture for fast program/erase
  • SPI Multi-I/O: x1, x2, x4 data width support
  • SDR and DDR read modes up to 80 MBps
  • Page programming buffer: 256B/512B options
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles minimum
  • 20-year data retention minimum
  • 1024-byte One-Time Programmable (OTP) area
  • Advanced sector and block protection features
  • Versatile I/O voltage range: 1.65 V to VCC
  • Operating temp: –40°C to +125°C

Description

  • High density, reliable code and data storage
  • Fast erase/program boosts system performance
  • Flexible I/O supports wide host compatibility
  • High-speed read enables XIP applications
  • Efficient page buffer speeds up programming
  • Multiple erase options ease legacy migration
  • Long endurance reduces maintenance needs
  • Data retention ensures long-term reliability
  • OTP region enhances system security
  • Robust protection prevents data corruption
  • Wide voltage range fits diverse systems
  • Broad temp range suits harsh environments

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