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IPP111N15N3 G
  • IPP111N15N3 G

IPP111N15N3 G

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The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Infineon Technologies IPP111N15N3 G Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.51

Ciss

3230 pF

Coss

378 pF

ID (@25°C) max

83 A

IDpuls max

332 A

Operating Temperature range

-55 °C to 175 °C

Package

TO-220

Polarity

N

Ptot max

214 W

QG (typ @10V)

41 nC

RDS (on) (@10V) max

11.1 mΩ

Rth

0.7 K/W

VDS max

150 V

VGS(th) range

2 V to 4 V

VGS(th)

3 V

Apps

Medium voltage IBC (48 V)

Features

  • Excellent switching performance
  • World’s lowest R DS(on)
  • Low Q g and Q gd
  • Excellent gate charge
  • RoHS compliant-halogen free
  • MSL1 rated

Description

  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products

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