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RIC7S113L4SCB
  • RIC7S113L4SCB

RIC7S113L4SCB

Active and preferred

Rad hard high voltage, high speed power MOSFET and IGBT driver RIC7S113L4SCB has independent high and low side referenced output channels. Designed for harsh radiation environments such as space, its electrical parameters are characterized up to 100 krad(Si) TID and LET of 81.9 MeV·cm2/mg. MIL-PRF-38535 Level B screening in a MO-036AB CIC package.

Infineon Technologies RIC7S113L4SCB Product Info

16 April 2026 1

Parameters

Bias Supply Voltage range

5 V to 20 V

Channels

2

Configuration

High-side and low-side

Language

SPICE

Output Voltage max

20 V

OverClocking

Delay Matching 20 (ns)

Package

MO-036AB

Product Category

HiRel Power ICs

SEE

81.9 MeV∙cm2/mg

Supply Voltage range

10 V to 20 V

TID max

100 Krad(Si)

Voltage Class

100 V

VS max

400 V

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