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ISK018NE1LM7
  • ISK018NE1LM7

ISK018NE1LM7

Active and preferred

ISK018NE1LM7 is part of the first 15 V rated trench power MOSFETs portfolio in the industry, featuring very low RDS(on) of 2.15 mOhm while offering a pulsed current capability of more than 500 A, with a typical thermal resistance junction to case-bottom (RthJC) of 1.6 K/W. The small 4 mm2 footprint package enables significant space saving with PCB layout flexibility while having form factor improvement.

Infineon Technologies ISK018NE1LM7 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.37

ID (@25°C) max

129 A

Operating Temperature range

-55 °C to 150 °C

Package

PQFN 2 x 2 (DFN2020)

Polarity

N

QG (typ @4.5V)

7.5 nC

RDS (on) (@4.5V) max

2.15 mΩ

Special Features

Logic Level, Switching optimized

VDS max

15 V

VGS(th) range

1.2 V to 2 V

VGS(th)

1.6 V

Features

  • New 15 V trench power MOSFET technology
  • RDS(on) of 2.15 mOhm
  • Qg of 9 nC, QOSS of 8,9 nC
  • Ultra-low package parasitics
  • Small package outline

Description

  • Top fit in high-ratio DC-DC conversion
  • Reduced conduction losses
  • High efficiency
  • Best switching performance
  • Enables significant space saving

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