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ISC025N08NM6
  • ISC025N08NM6

ISC025N08NM6

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OptiMOS™ 6 power MOSFET in 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >21% lower RDS(on) and ~40% improved FOMQg x RDS(on) in D2PAK 7Pin. The performance improvements lead to higher system efficiency and power density.

Infineon Technologies ISC025N08NM6 Product Info

16 April 2026 0

Parameters

ID (@25°C) max

171 A

IDpuls max

684 A

Operating Temperature range

-55 °C to 175 °C

Package

SuperSO8 5x6

Polarity

N

QG (typ @10V)

46 nC

RDS (on) (@10V) max

2.5 mΩ

VDS max

80 V

VGS(th) range

2.4 V to 3.5 V

VGS(th)

3 V

Apps

Server power supply units (PSU), Telecommunications infrastructure, Photovoltaic, DC-DC power conversion

Features

  • High performance silicon technology
  • RDS(on) options for application-fit
  • Low top-side RthJC (0.72 K/W)
  • Normal level gate drive
  • 175°C rated
  • Industrial qualification

Description

  • Lower conduction losses than OptiMOS™ 5
  • Lower switching losses than OptiMOS™ 5
  • Improved heat dissipation
  • Improved power, SOA avalanche current
  • Robust reliable performance

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